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H5N1506P MOSFET Transistor

The H5N1506P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H5N1506P transistor as follows.

Circuit diagram symbol of the H5N1506P transistor

H5N1506P Transistor Specification

Transistor Code H5N1506P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3P
Drain-Source Voltage (Maximum) VDS 150V
Drain Current (Maximum) ID 98A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.014Ohm
Power Dissipation (Maximum) PD 150W
Total Gate Charge 100nC

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