H50N03J MOSFET Transistor

The H50N03J is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H50N03J transistor as follows.

H50N03J Transistor Specification

Transistor Code		H50N03J
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		330.55pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS

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