H35N03J MOSFET Transistor

The H35N03J is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H35N03J transistor as follows.

H35N03J Transistor Specification

Transistor Code		H35N03J
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	57W
Drain-Source Capacitance		268.43pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.87nS

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