H3055LJ MOSFET Transistor

The H3055LJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H3055LJ transistor as follows.

H3055LJ Transistor Specification

Transistor Code		H3055LJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		106pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.95nS

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