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H10N65F MOSFET Transistor

The H10N65F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H10N65F transistor as follows.

Circuit diagram symbol of the H10N65F transistor

H10N65F Transistor Specification

Transistor Code H10N65F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220FP
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 117pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 75nS

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