H10N65E MOSFET Transistor

The H10N65E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H10N65E transistor as follows.

H10N65E Transistor Specification

Transistor Code		H10N65E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		117pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		75nS

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