H10N60E MOSFET Transistor

The H10N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H10N60E transistor as follows.

H10N60E Transistor Specification

Transistor Code		H10N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		325pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		26nS

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