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H07N65F MOSFET Transistor

The H07N65F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H07N65F transistor as follows.

Circuit diagram symbol of the H07N65F transistor

H07N65F Transistor Specification

Transistor Code H07N65F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220FP
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 48W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 29nS

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