H07N60E MOSFET Transistor

The H07N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H07N60E transistor as follows.

H07N60E Transistor Specification

Transistor Code		H07N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS

UXPython is not the creator or an official representative of the H07N60E MOSFET transistor. You can download the official H07N60E MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IRF9620 MOSFET Transistor PHP9NQ20T MOSFET Transistor 2SK2603 MOSFET Transistor 2SK2661 MOSFET Transistor PHP33NQ20T MOSFET Transistor BUK7506-75B MOSFET Transistor RFP10P03L MOSFET Transistor IRFB3507 MOSFET Transistor IRL520NPBF MOSFET Transistor IRFB4332 MOSFET Transistor 2SK2351 MOSFET Transistor IRL2910PBF MOSFET Transistor 2SK1503-01 MOSFET Transistor HUF75309P3 MOSFET Transistor RFP50N06LE MOSFET Transistor IRF3704Z MOSFET Transistor IRFI4410ZG MOSFET Transistor BUK753R1-40B MOSFET Transistor IRL2505PBF MOSFET Transistor BUZ90 MOSFET Transistor