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H07N60E MOSFET Transistor

The H07N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H07N60E transistor as follows.

Circuit diagram symbol of the H07N60E transistor

H07N60E Transistor Specification

Transistor Code H07N60E
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 110W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 19nS

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