H02N60SI MOSFET Transistor

The H02N60SI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H02N60SI transistor as follows.

H02N60SI Transistor Specification

Transistor Code		H02N60SI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		56pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS

UXPython is not the creator or an official representative of the H02N60SI MOSFET transistor. You can download the official H02N60SI MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

BRI5N50 MOSFET Transistor IRFU7740PBF MOSFET Transistor PI632BZ MOSFET Transistor AP05N20GJ-HF MOSFET Transistor AP60T03GJ MOSFET Transistor 2SK4080-S27-AY MOSFET Transistor P0260AI MOSFET Transistor CS5N65_A3 MOSFET Transistor IXTU2N80P MOSFET Transistor SM1A28NSUB MOSFET Transistor SSM70T03J MOSFET Transistor IRLU3717PBF MOSFET Transistor H01N60SI MOSFET Transistor BRI5N60 MOSFET Transistor CED85A3 MOSFET Transistor AP9916GJ MOSFET Transistor P0770EI MOSFET Transistor AP60SL600AJ MOSFET Transistor AP4435GJ MOSFET Transistor SM6F23NSUB MOSFET Transistor