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H02N60F MOSFET Transistor

The H02N60F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H02N60F transistor as follows.

Circuit diagram symbol of the H02N60F transistor

H02N60F Transistor Specification

Transistor Code H02N60F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220FP
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.4Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 56pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 21nS

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