H01N60SI MOSFET Transistor

The H01N60SI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H01N60SI transistor as follows.

H01N60SI Transistor Specification

Transistor Code		H01N60SI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	12Ohm
Power Dissipation (Maximum)	PD	28W
Drain-Source Capacitance		19pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS

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