H01N45A MOSFET Transistor

The H01N45A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the H01N45A transistor as follows.

H01N45A Transistor Specification

Transistor Code		H01N45A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	450V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.5Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		27.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS

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