GWM160-0055X1-SMD MOSFET Transistor

The GWM160-0055X1-SMD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the GWM160-0055X1-SMD transistor as follows.

GWM160-0055X1-SMD Transistor Specification

Transistor Code		GWM160-0055X1-SMD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUSDIL
Drain-Source Voltage (Maximum)	VDS	55V
Drain Current (Maximum)	ID	150A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0033Ohm
Power Dissipation (Maximum)	PD	15W
Rise Time		120nS

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