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GFD30N03 MOSFET Transistor

The GFD30N03 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the GFD30N03 transistor as follows.

Circuit diagram symbol of the GFD30N03 transistor

GFD30N03 Transistor Specification

Transistor Code GFD30N03
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 40A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 38W
Drain-Source Capacitance 850pF
Operating Junction Temperature (Maximum) 150°C

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