G96 MOSFET Transistor

The G96 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G96 transistor as follows.

G96 Transistor Specification

Transistor Code		G96
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN3X3-8L
Transistor SMD Code		G96
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	18W
Drain-Source Capacitance		680pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS

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