G7N65 MOSFET Transistor

The G7N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G7N65 transistor as follows.

G7N65 Transistor Specification

Transistor Code		G7N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		98.1pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17.7nS

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