G69 MOSFET Transistor

The G69 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G69 transistor as follows.

G69 Transistor Specification

Transistor Code		G69
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2X2-6L
Transistor SMD Code		G69
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	18W
Drain-Source Capacitance		680pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS

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