G50N10 MOSFET Transistor

The G50N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G50N10 transistor as follows.

G50N10 Transistor Specification

Transistor Code		G50N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.017Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		9nS

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