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G29 MOSFET Transistor

The G29 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G29 transistor as follows.

Circuit diagram symbol of the G29 transistor

G29 Transistor Specification

Transistor Code G29
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Transistor SMD Code G29
Drain-Source Voltage (Maximum) VDS 18V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 1.7W
Drain-Source Capacitance 290pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS

UXPython is not the creator or an official representative of the G29 MOSFET transistor. You can download the official G29 MOSFET transistor datasheet to get more infromation about this transistor.

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