G2009 MOSFET Transistor

The G2009 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G2009 transistor as follows.

G2009 Transistor Specification

Transistor Code		G2009
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS

UXPython is not the creator or an official representative of the G2009 MOSFET transistor. You can download the official G2009 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

AP18P10GJ MOSFET Transistor IRLU9343PBF MOSFET Transistor 2SJ245L MOSFET Transistor AP25N10GJ-HF MOSFET Transistor CS1N65_B3 MOSFET Transistor AP6N100J MOSFET Transistor IRLU7843PBF MOSFET Transistor SM6F24NSUB MOSFET Transistor AP60WN1K5J MOSFET Transistor AP4002J-HF MOSFET Transistor AP60N03GJ MOSFET Transistor IRLU2705PBF MOSFET Transistor SM7A23NSUB MOSFET Transistor BRI3N80 MOSFET Transistor AP10TN135J MOSFET Transistor AP06P20GJ-HF MOSFET Transistor IXTU4N60P MOSFET Transistor FTK4N65I MOSFET Transistor SM6A24NSUB MOSFET Transistor CED14G04 MOSFET Transistor