G17 MOSFET Transistor

The G17 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G17 transistor as follows.

G17 Transistor Specification

Transistor Code		G17
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23-3L
Transistor SMD Code		G17
Drain-Source Voltage (Maximum)	VDS	15V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		390pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS

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