G10N10 MOSFET Transistor

The G10N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G10N10 transistor as follows.

G10N10 Transistor Specification

Transistor Code		G10N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8
Transistor SMD Code		G10N10
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.017Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		590pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS

UXPython is not the creator or an official representative of the G10N10 MOSFET transistor. You can download the official G10N10 MOSFET transistor datasheet to get more infromation about this transistor.

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