G100N03 MOSFET Transistor

The G100N03 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G100N03 transistor as follows.

G100N03 Transistor Specification

Transistor Code		G100N03
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		1300pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		160nS

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