G1002L MOSFET Transistor

The G1002L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G1002L transistor as follows.

G1002L Transistor Specification

Transistor Code		G1002L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23-3L
Transistor SMD Code		G1002L
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		22pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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