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FX50KMJ-06 MOSFET Transistor

The FX50KMJ-06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FX50KMJ-06 transistor as follows.

Circuit diagram symbol of the FX50KMJ-06 transistor

FX50KMJ-06 Transistor Specification

Transistor Code FX50KMJ-06
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-220FN
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0189Ohm
Power Dissipation (Maximum) PD 35W
Drain-Source Capacitance 1355pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 137nS
Gate-Threshold Voltage (Maximum) 2.3V

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