FX20VSJ-3 MOSFET Transistor

The FX20VSJ-3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FX20VSJ-3 transistor as follows.

FX20VSJ-3 Transistor Specification

Transistor Code		FX20VSJ-3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220S
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.29Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		248pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		42nS
Gate-Threshold Voltage (Maximum)		2V

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