FTU04N65C MOSFET Transistor

The FTU04N65C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTU04N65C transistor as follows.

FTU04N65C Transistor Specification

Transistor Code		FTU04N65C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.6Ohm
Power Dissipation (Maximum)	PD	92.5W
Operating Junction Temperature (Maximum)		150°C

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