FTU04N60B MOSFET Transistor

The FTU04N60B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTU04N60B transistor as follows.

FTU04N60B Transistor Specification

Transistor Code		FTU04N60B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.8Ohm
Power Dissipation (Maximum)	PD	89W
Drain-Source Capacitance		39pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS

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