FTK6601S MOSFET Transistor

The FTK6601S is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTK6601S transistor as follows.

FTK6601S Transistor Specification

Transistor Code		FTK6601S
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.8(4.2)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035(0.065)Ohm
Power Dissipation (Maximum)	PD	1.4W
Operating Junction Temperature (Maximum)		150°C

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