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FTK4N65I MOSFET Transistor

The FTK4N65I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTK4N65I transistor as follows.

Circuit diagram symbol of the FTK4N65I transistor

FTK4N65I Transistor Specification

Transistor Code FTK4N65I
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.7Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS

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