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FTK2012 MOSFET Transistor

The FTK2012 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTK2012 transistor as follows.

Circuit diagram symbol of the FTK2012 transistor

FTK2012 Transistor Specification

Transistor Code FTK2012
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFNWB2X2-6L
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.011Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 650pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS

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