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FTK1N60L MOSFET Transistor

The FTK1N60L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTK1N60L transistor as follows.

Circuit diagram symbol of the FTK1N60L transistor

FTK1N60L Transistor Specification

Transistor Code FTK1N60L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO92L
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 9.3Ohm
Power Dissipation (Maximum) PD 3W
Drain-Source Capacitance 25pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS

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