FTK1N60I MOSFET Transistor

The FTK1N60I is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTK1N60I transistor as follows.

FTK1N60I Transistor Specification

Transistor Code		FTK1N60I
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	12Ohm
Power Dissipation (Maximum)	PD	27W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS

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