FTK12N10S MOSFET Transistor

The FTK12N10S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTK12N10S transistor as follows.

FTK12N10S Transistor Specification

Transistor Code		FTK12N10S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8
Transistor SMD Code		Q12N10
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.017Ohm
Power Dissipation (Maximum)	PD	1.4W
Drain-Source Capacitance		590pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS

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