FTK10N60P MOSFET Transistor

The FTK10N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTK10N60P transistor as follows.

FTK10N60P Transistor Specification

Transistor Code		FTK10N60P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.73Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		166pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		69nS

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