FTE11N06G MOSFET Transistor

The FTE11N06G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTE11N06G transistor as follows.

FTE11N06G Transistor Specification

Transistor Code		FTE11N06G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.015Ohm
Power Dissipation (Maximum)	PD	5.2W
Operating Junction Temperature (Maximum)		150°C

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