FTA06N65 MOSFET Transistor

The FTA06N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTA06N65 transistor as follows.

FTA06N65 Transistor Specification

Transistor Code		FTA06N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.25Ohm
Power Dissipation (Maximum)	PD	31W
Drain-Source Capacitance		127pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS

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