FTA02N65B MOSFET Transistor

The FTA02N65B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTA02N65B transistor as follows.

FTA02N65B Transistor Specification

Transistor Code		FTA02N65B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8Ohm
Power Dissipation (Maximum)	PD	21W
Drain-Source Capacitance		28.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS

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