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FTA02N65B MOSFET Transistor

The FTA02N65B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTA02N65B transistor as follows.

Circuit diagram symbol of the FTA02N65B transistor

FTA02N65B Transistor Specification

Transistor Code FTA02N65B
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 8Ohm
Power Dissipation (Maximum) PD 21W
Drain-Source Capacitance 28.5pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 19nS

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