FSW25N50A MOSFET Transistor

The FSW25N50A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FSW25N50A transistor as follows.

FSW25N50A Transistor Specification

Transistor Code		FSW25N50A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PN
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.26Ohm
Power Dissipation (Maximum)	PD	230W
Drain-Source Capacitance		410pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		117nS

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