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FS18SM-10 MOSFET Transistor

The FS18SM-10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FS18SM-10 transistor as follows.

Circuit diagram symbol of the FS18SM-10 transistor

FS18SM-10 Transistor Specification

Transistor Code FS18SM-10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3P
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.4Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 80nS
Gate-Threshold Voltage (Maximum) 4V

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