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FRM9250H MOSFET Transistor

The FRM9250H is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FRM9250H transistor as follows.

Circuit diagram symbol of the FRM9250H transistor

FRM9250H Transistor Specification

Transistor Code FRM9250H
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO204AA
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 150W
Operating Junction Temperature (Maximum) 150°C
Rise Time 250nS

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