FQU7P06TU MOSFET Transistor

The FQU7P06TU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU7P06TU transistor as follows.

FQU7P06TU Transistor Specification

Transistor Code		FQU7P06TU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		I-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.451Ohm
Power Dissipation (Maximum)	PD	28W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		6.3nC

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