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FQU5N50TU MOSFET Transistor

The FQU5N50TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU5N50TU transistor as follows.

Circuit diagram symbol of the FQU5N50TU transistor

FQU5N50TU Transistor Specification

Transistor Code FQU5N50TU
Transistor Type MOSFET
Control Channel Type N-Channel
Package I-PAK
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.8Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 75pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 55nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 13nC

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