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FQU5N50CTU MOSFET Transistor

The FQU5N50CTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU5N50CTU transistor as follows.

Circuit diagram symbol of the FQU5N50CTU transistor

FQU5N50CTU Transistor Specification

Transistor Code FQU5N50CTU
Transistor Type MOSFET
Control Channel Type N-Channel
Package I-PAK
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 48W
Drain-Source Capacitance 80pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 46nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 18nC

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