FQU4N50TU_WS MOSFET Transistor

The FQU4N50TU_WS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU4N50TU_WS transistor as follows.

FQU4N50TU_WS Transistor Specification

Transistor Code		FQU4N50TU_WS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251_IPAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.7Ohm
Power Dissipation (Maximum)	PD	45W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		10nC

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