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FQU2N90TU_AM002 MOSFET Transistor

The FQU2N90TU_AM002 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU2N90TU_AM002 transistor as follows.

Circuit diagram symbol of the FQU2N90TU_AM002 transistor

FQU2N90TU_AM002 Transistor Specification

Transistor Code FQU2N90TU_AM002
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251_IPAK
Drain-Source Voltage (Maximum) VDS 900V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 7.2Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 12nC

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