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FQU2N50BTU MOSFET Transistor

The FQU2N50BTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU2N50BTU transistor as follows.

Circuit diagram symbol of the FQU2N50BTU transistor

FQU2N50BTU Transistor Specification

Transistor Code FQU2N50BTU
Transistor Type MOSFET
Control Channel Type N-Channel
Package I-PAK
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 5.3Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 30pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 3.7V
Total Gate Charge 6nC

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