FQU1N60C MOSFET Transistor

The FQU1N60C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU1N60C transistor as follows.

FQU1N60C Transistor Specification

Transistor Code		FQU1N60C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251_IPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	11.5Ohm
Power Dissipation (Maximum)	PD	28W
Operating Junction Temperature (Maximum)		150°C

UXPython is not the creator or an official representative of the FQU1N60C MOSFET transistor. You can download the official FQU1N60C MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQU3N50C MOSFET Transistor FQU17P06 MOSFET Transistor FQU13N10L MOSFET Transistor FCU4300N80Z MOSFET Transistor FQU5N60C MOSFET Transistor FQU13N06L MOSFET Transistor SDD02N60 MOSFET Transistor FQU4N50TU_WS MOSFET Transistor FQU12N20 MOSFET Transistor FCU900N60Z MOSFET Transistor FDU6N25 MOSFET Transistor FQU2N90 MOSFET Transistor FCU5N60 MOSFET Transistor SDD03N04 MOSFET Transistor FCU850N80Z MOSFET Transistor FQU2N100 MOSFET Transistor FQU1N80 MOSFET Transistor FQU11P06 MOSFET Transistor FQU8P10 MOSFET Transistor SDD01N70 MOSFET Transistor