FQU1N60C MOSFET Transistor

The FQU1N60C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU1N60C transistor as follows.

FQU1N60C Transistor Specification

Transistor Code		FQU1N60C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251_IPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	11.5Ohm
Power Dissipation (Maximum)	PD	28W
Operating Junction Temperature (Maximum)		150°C

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