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FQU13N06L MOSFET Transistor

The FQU13N06L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU13N06L transistor as follows.

Circuit diagram symbol of the FQU13N06L transistor

FQU13N06L Transistor Specification

Transistor Code FQU13N06L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251_IPAK
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.11Ohm
Power Dissipation (Maximum) PD 28W
Operating Junction Temperature (Maximum) 150°C

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